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SSS7N60 - N-CHANNEL MOSFET

General Description

The SSS7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • RDS(ON)=1.2Ω@VGS =10V.
  • Ultra Low gate charge(tupical 29nC).
  • Low reverse transfer capacitance(Crss=typical6.0pF).
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability,high ruggedness.
  • SYMBOL.

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Datasheet Details

Part number SSS7N60
Manufacturer Tuofeng Semiconductor
File Size 280.15 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet SSS7N60 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS7N60 7.0Amps ,600Volts N-CHANNEL MOSFET ■ DESCRIPTION The SSS7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually usually used at high speed switching applications in power supplies .PWM motor controls, high efficient .DC to DC converters and bridge circuits ■ FEATURES ● RDS(ON)=1.2Ω@VGS =10V ● Ultra Low gate charge(tupical 29nC) ● Low reverse transfer capacitance(Crss=typical6.