TF2303 - P-Channel MOSFET

Tuofeng Semiconductor

Datasheet Details

Part number	TF2303
Manufacturer	Tuofeng Semiconductor
File Size	118.56 KB
Description	P-Channel MOSFET
Datasheet	TF2303 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TF23892	3-Phase Half-Bridge Gate Driver	Telefunken
TF2-12V	SMALL POLARIZED RELAY WITH HIGH SENSITIVITY	Matsushita Electric Works(Nais)
TF2-24V	SMALL POLARIZED RELAY WITH HIGH SENSITIVITY	Matsushita Electric Works(Nais)
TF2-3V	SMALL POLARIZED RELAY WITH HIGH SENSITIVITY	Matsushita Electric Works(Nais)
TF2-4.5V	SMALL POLARIZED RELAY WITH HIGH SENSITIVITY	Matsushita Electric Works(Nais)

Other Datasheets by Tuofeng Semiconductor

Part Number	Description
TF2300	N-Channel Enhancement Mode Field Effect Transistor
TF2301	P-Channel MOSFET
TF2301A	P-Channel MOSFET
TF2302	N-Channel MOSFET
TF2302A	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2303 P-Channel, 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.240 @ VGS = –10 V –30 0.460 @ VGS = –4.5 V ID (A)b –1.4 –1.0 (SOT-23) G1 S2 3D Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS –30 V VGS "20 Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b TA= 25_C ID IDM IS –1.4 –1.3 –0.75 –10 –0.6 A Power Dissipationb TA= 25_C PD 0.9 0.7 W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a.