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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2306 N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
30 0.057 @ VGS = 10 V 0.094 @ VGS = 4.5 V
-
ID (A)
3.5 2.8
FEATURES D Power MOSFET D 100% Rg Tested
(SOT-23)
G1 S2
3D
Top View
TF2306 *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS VGS
30 "20
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range
TA = 25_C TA = 25_C
ID
IDM IS
PD TJ, Tstg
3.5 16 1.25
1.25
- 55 to 150
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambienta
Notes a.
TF2306 Datasheet
