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MA02206GJ - 3.6V 0.5W RF Power Amplifier IC for DECT

General Description

The MA02206GJ is a DECT Power amplifier based on M/A-COM’s Self-Aligned MSAG MESFET Process.

This product is designed for use in 3.6 V DECT handsets and base stations.

MAXIMUM RATINGS (Beyond these limits, the device may be damaged or device reliability reduced.

Key Features

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  • = Single Positive Supply 57% Power Added Efficiency Operation down to 1.2 V 100% Duty Cycle 1800 to 2000 MHz Operation 8 Pin Full Downset MSOP Plastic Package Accommodates Battery Charging Conditions up to 5.6 Volts ® Self-Aligned MSAG -Lite MESFET Process 8 Lead MSOP Package Package bottom is electrical and thermal ground.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MA02206GJ 3.6V 0.5W RF Power Amplifier IC for DECT FEATURES •= •= •= •= •= •= •= •= Single Positive Supply 57% Power Added Efficiency Operation down to 1.2 V 100% Duty Cycle 1800 to 2000 MHz Operation 8 Pin Full Downset MSOP Plastic Package Accommodates Battery Charging Conditions up to 5.6 Volts ® Self-Aligned MSAG -Lite MESFET Process 8 Lead MSOP Package Package bottom is electrical and thermal ground DESCRIPTION The MA02206GJ is a DECT Power amplifier based on M/A-COM’s Self-Aligned MSAG MESFET Process. This product is designed for use in 3.6 V DECT handsets and base stations. MAXIMUM RATINGS (Beyond these limits, the device may be damaged or device reliability reduced. Functional operation at absolute–maximum–rated conditions is not implied.