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MRF151A - RF Power Field-Effect Transistor

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www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) Gate–Body Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 125 — — — — — — 5.0 1.0 Vdc mAdc µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) Forward Transconductance (VDS = 10 V, ID = 5.0 A) VGS(th) VDS(on) gfs 1.0 1.0 5.0 3.0 3.0 7.0 5.0 5.0 — Vdc Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.
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