MRF157
( Data Sheet : .. )
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF157/D
The RF Power MOS Line
Power Field Effect Transistor
N- Channel Enhancement Mode
Designed primarily for linear large- signal output stages to 80 MHz.
- Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 d B (Typ) Efficiency = 45% (Typ)
600 W, to 80 MHz MOS LINEAR RF POWER FET
S CASE 368- 03, STYLE 2
MAXIMUM RATINGS
Rating Drain- Source Voltage Drain- Gate Voltage Gate- Source Voltage Drain Current
- Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 ±40 60 1350 7.7
- 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.13 Unit °C/W
NOTE
- CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling...
