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MRF157 - MOS LINEAR RF POWER FET

Features

  • r>.
  • to.
  • source threshold voltage, VGS(th). Cgd GATE Cgs DRAIN Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cds SOURCE REV 1 5 Gate Voltage Rating.
  • Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination.
  • The gates of these devices are essentially capacitors. Circuits that leave the gate open.
  • circuited or floating should be avoided. These conditions can result in.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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( DataSheet : www.DataSheet4U.com ) SEMICONDUCTOR TECHNICAL DATA Order this document by MRF157/D The RF Power MOS Line Power Field Effect Transistor N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45% (Typ) MRF157 600 W, to 80 MHz MOS LINEAR RF POWER FET D G S CASE 368–03, STYLE 2 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 ±40 60 1350 7.
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