l l l l l
Transistor,
4OW, 28V
UF2840G
v2.00
N-Channel Enhancement DMOS Structure Lower Capacitances
Mode Device Operation Devices
for Broadband
High Saturated Output Power Lower Noise Figure Than Competitive
Absolute Maximum Ratings at 25°C
Parameter
Drain-Source Gate-Source Voltage Voltage
Symbol
V OS V GS ‘OS P, 1 T, (
Rating
65 20 4’ 116 200 -55 to +150 1.52 I
Units
V V A w “C “C “C/w
1 F I 6.22 I 6.48 1 a245 I .2X5 I
Drain-Source&rent Power Dissipation 1 JunctionTemperature
I
S.
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-www.DataSheet4U.com 3== -0-z =z -- 32 -z= .-me--= = * an AMP company RF MOSFET Power 100 - 500 MHz Features l l l l l Transistor, 4OW, 28V UF2840G v2.00 N-Channel Enhanc...
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Features l l l l l Transistor, 4OW, 28V UF2840G v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device Operation Devices for Broadband High Saturated Output Power Lower Noise Figure Than Competitive Absolute Maximum Ratings at 25°C Parameter Drain-Source Gate-Source Voltage Voltage Symbol V OS V GS ‘OS P, 1 T, ( Rating 65 20 4’ 116 200 -55 to +150 1.52 I Units V V A w “C “C “C/w 1 F I 6.22 I 6.48 1 a245 I .2X5 I Drain-Source&rent Power Dissipation 1 JunctionTemperature I Storage Temperature Thermal Resistance TST0 8JC 1 K I l.18 I 203 I .070 I x180 I Electrical Characteristics at 25°C * Per Side Specific
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UF2840G Datasheet
