www.DataSheet4U.com an =y FE AMP comDanv RF MOSFET Power 100 - 500 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operatio...
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t Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor . . Transistor, 4OW, 28V UF284OP Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units i D i 627 i 6.33 1 247 1 257 1 H J ] 1 1.40 292 1 I 165 3.M 1 I 055 115 1 I .D65 325 Electrical Characteristics at 25°C input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance * Per Side C ISS C oss C RSS GP qD - ) 45 30 a pF pF PF dB % - Vg28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V, F=l .O MHz’ V, F=l .O MHz’ V, F=l .O MHz’ V, 1,,=500.0 mA, P,fi40.0 V
UF2840P Datasheet
