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QM6020AP Datasheet Preview

QM6020AP Datasheet

N-Ch 60V Fast Switching MOSFETs

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QM6020AP
N-Ch 60V Fast Switching MOSFETs
General Description
The QM6020AP is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM6020AP meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
60V
RDSON
3.8m
ID
198A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter
z Networking DC-DC Power System
z Power Tool Application
TO220 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1,7
Continuous Drain Current, VGS @ 10V1,7
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
G DS
Rating
60
±20
198
125
17.5
14
350
977
107
260
2.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
1
Typ.
---
---
Max.
62
0.48
Unit
/W
/W
Rev A.02 D052011




UBIQ

QM6020AP Datasheet Preview

QM6020AP Datasheet

N-Ch 60V Fast Switching MOSFETs

No Preview Available !

QM6020AP
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=30A
VGS=VDS , ID =250uA
VDS=48V , VGS=0V , TJ=25
VDS=48V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=30A
VDS=0V , VGS=0V , f=1MHz
VDS=48V , VGS=10V , ID=15A
VDD=30V , VGS=10V , RG=3.3Ω,
ID=48A
VDS=15V , VGS=0V , f=1MHz
Min.
60
---
---
2.5
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.058
3
---
-7.8
---
---
---
95
2.8
89
32
18
33.6
40.6
59
26.8
6655
1565
340
Max.
---
---
3.8
4.5
---
1
5
±100
---
5.6
124.6
44.8
25.2
67.2
73
118
53.6
9317
2191
476
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=50V , L=0.1mH , IAS=30A
Min.
78
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min. Typ.
IS Continuous Source Current1,6
ISM Pulsed Source Current2,6
VSD Diode Forward Voltage2
VG=VD=0V , Force Current
VGS=0V , IS=A , TJ=25
--- ---
--- ---
--- ---
trr Reverse Recovery Time
--- 46
Qrr Reverse Recovery Charge
IF=30A , dI/dt=100A/µs , TJ=25---
52
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=0.1mH,IAS=107A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
7.Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Max.
198
350
1.2
---
---
Unit
A
A
V
nS
nC
2


Part Number QM6020AP
Description N-Ch 60V Fast Switching MOSFETs
Maker UBIQ
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