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SI2301B - P-Channel MOSFET

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Part number SI2301B
Manufacturer UMW
File Size 871.71 KB
Description P-Channel MOSFET
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UMW R UMW SI2301B UMW SI2301B P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX -20 V 120 mΩ@-4.5V 150 mΩ@-2.5V ID 2.5 A SOT-23 1. GATE 2. SOURCE 3. DRAIN FEATURE TrenchFET Power MOSFET APPLICATION z Load Switch for Portable Devices z DC/DC Converter MARKING A1SHB Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t ≤ 5s) Junction Temperature Storage Temperature VDS VGS ID IDM IS PD RθJA TJ Tstg Value -20 ±8 -2.5 -10 -0.72 0.35 357 150 -55 ~+150 Unit V A W ℃/W ℃ www.umw-ic.
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