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UMW R
UMW SI2301B
UMW SI2301B P-Channel 20-V(D-S) MOSFET
V(BR)DSS
RDS(on)MAX
-20 V
120 mΩ@-4.5V 150 mΩ@-2.5V
ID
2.5 A
SOT-23
1. GATE 2. SOURCE 3. DRAIN
FEATURE TrenchFET Power MOSFET
APPLICATION z Load Switch for Portable Devices z DC/DC Converter
MARKING
A1SHB
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t ≤ 5s) Junction Temperature Storage Temperature
VDS VGS ID IDM IS PD RθJA TJ Tstg
Value -20 ±8 -2.5 -10
-0.72 0.35 357 150 -55 ~+150
Unit V
A
W ℃/W ℃
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SI2301B Datasheet
