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UMW

SI2301B Datasheet Preview

SI2301B Datasheet

P-Channel MOSFET

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UMW R
UMW SI2301B
UMW SI2301B P-Channel 20-V(D-S) MOSFET
V(BR)DSS
RDS(on)MAX
-20 V
120 mΩ@-4.5V
150 mΩ@-2.5V
ID
2.5 A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
TrenchFET Power MOSFET
APPLICATION
z Load Switch for Portable Devices
z DC/DC Converter
MARKING
A1SHB
Equivalent Circuit
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient(t 5s)
Junction Temperature
Storage Temperature
VDS
VGS
ID
IDM
IS
PD
RθJA
TJ
Tstg
Value
-20
±8
-2.5
-10
-0.72
0.35
357
150
-55 ~+150
Unit
V
A
W
/W
www.umw-ic.com
1
友台半导体有限公司




UMW

SI2301B Datasheet Preview

SI2301B Datasheet

P-Channel MOSFET

No Preview Available !

UMW R
UMW SI2301B
Ta=25 unless otherwise specified
Parameter
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance a
Forward transconductance a
Dynamicb
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Symbol Test Condition
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0V, ID =-250µA
VDS =VGS, ID =-250µA
VDS =0V, VGS =±8V
VDS =-20V, VGS =0V
VGS =-4.5V, ID =-2.8A
VGS =-2.5V, ID =-2.0A
VDS =-5V, ID =-2.8A
Ciss
Coss
VDS =-10V,VGS =0V,f =1MHz
Crss
VDS =-10V,VGS =-4.5V,ID =-3A
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Drain-source body diode characteristics
VDS =-10V,VGS =-2.5V,ID =-3A
f =1MHz
VDD=-10V,
RL=10, ID =-1A,
VGEN=-4.5V,Rg=1
Continuous source-drain diode current
IS
TC=25
Pulse diode forward current a
ISM
Body diode voltage
VSD
IS=-0.7A
Notes :
a.Pulse Test : Pulse Width < 300µs, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
Min Typ Max Units
-20
V
-0.4
-1
±100 nA
-1
µA
0.095 0.120
0.120 0.150
4.0
S
405
75
pF
55
5.5
10
3.3
6
nC
0.7
1.3
6.0
11
20
35
60
ns
30
50
10
20
-1.3
A
-10
-0.8 -1.2
V
www.umw-ic.com
2
友台半导体有限公司


Part Number SI2301B
Description P-Channel MOSFET
Maker UMW
PDF Download

SI2301B Datasheet PDF






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