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P1103BVG Datasheet Preview

P1103BVG Datasheet

N-Channel Enhancement Mode MOSFET

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P1103BVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 11mΩ @VGS = 10V
ID
11A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
11
10
100
Avalanche Current
IAS 11
Avalanche Energy
L = 0.1mH
EAS
6
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
2.0
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
50 °C / W
Ver 1.0
1 2012/4/13




UNIKC

P1103BVG Datasheet Preview

P1103BVG Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P1103BVG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 11A
VDS = 15V, ID = 10A
30
1.0 1.5 2.5
±100
1
10
13.0 16.5
9.0 11.0
38
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0V, VDS = 15V, f = 1MHz
Reverse Transfer Capacitance
Crss
1800
720
125
Gate Resistance
Rg VGS = 15mV, VDS = 0V, f = 1MHz
1.5
Total Gate Charge2(10V)
Qg(VGS = 10V)
Qg(VGS = 4.5V)
17
12
Gate-Source Charge2
Qgs(VGS = 10V)
Qgs(VGS = 4.5V)
VDS = 0.5V(BR)DSS, ID = 11A
3.7
3.5
Gate-Drain Charge2
Qgd(VGS = 10V)
Qgd(VGS = 4.5V)
6.5
6.3
Gate-Drain Charge2
Qgd
5.1
Turn-On Delay Time2
td(on)
8.6
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V, RL = 25Ω
VGS = 10V, ID @ 1A, RGEN = 6Ω
21.0
43.0
Fall Time2
tf
10.0
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Pulsed Current3
ISM
Forward Voltage1
VSD IF = 1A, VGS = 0V
Reverse Recovery Time
trr IF = 2.3A, dlF/dt = 100A / mS
50
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
2.5
26
17
2.5
5
1.1
80
UNIT
V
nA
mA
mΩ
S
pF
Ω
nC
nS
A
V
nS
Ver 1.0
2 2012/4/13


Part Number P1103BVG
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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