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P2003ETF - P-Channel MOSFET

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Part number P2003ETF
Manufacturer UNIKC
File Size 468.45 KB
Description P-Channel MOSFET
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P2003ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -26A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -26 -16 -120 Avalanche Current IAS -31.4 Avalanche Energy L = 0.1mH EAS 49.5 Power Dissipation TC = 25 °C PD 29 TC = 100 °C 12 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM UNITS 4.2 °C / W 62.5 Rev 1.
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