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P2003EVT - P-Channel MOSFET

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Part number P2003EVT
Manufacturer UNIKC
File Size 481.92 KB
Description P-Channel MOSFET
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P2003EVT P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -9A SOP- 08 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C ID IDM -9 -8 -32 Avalanche Current IAS -28 Avalanche Energy L = 0.1mH EAS 40 Power Dissipation TC = 25 °C TC = 70 °C PD 2.5 1.3 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
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