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UNIKC

P9006ETF Datasheet Preview

P9006ETF Datasheet

P-Channel MOSFET

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P9006ETF
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60 90mΩ @VGS = 10V
ID
-15A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
-15
-9.5
-60
Avalanche Current
IAS -24
Avalanche Energy
L = 0.1mH
EAS
28
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
35
14
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.6
60
UNITS
°C / W
Ver 1.0
1 2012/4/16




UNIKC

P9006ETF Datasheet Preview

P9006ETF Datasheet

P-Channel MOSFET

No Preview Available !

P9006ETF
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = -48V, VGS = 0V
VDS = -40V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
VGS = -4.5V, ID = -6A
VGS = -10V, ID = -18A
VDS = -5V, ID = -18A
-60
-1.0 -1.8 -3.0
±250
1
10
-60
79 135
63 90
20
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -25V, f = 1MHz
1130
129
Reverse Transfer Capacitance
Crss
81
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
4.85
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -18A
Qgd
22.0
4.6
5.5
Turn-On Delay Time2
td(on)
18
Rise Time2
tr VDS = -30V,
120
Turn-Off Delay Time2
td(off)
ID @ -18A, VGS = -10V, RGS = 6Ω
20
Fall Time2
tf
58
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = -18A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -18A,
dlF/dt = 100A / μS
71
254
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-15
-1.3
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16


Part Number P9006ETF
Description P-Channel MOSFET
Maker UNIKC
Total Page 5 Pages
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