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P9006ETF
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60
90mΩ @VGS = 10V
ID -15A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
-60
Gate-Source Voltage
VGS
±20
Continuous Drain Current1 Pulsed Drain Current2
TC = 25 °C TC = 100 °C
ID
-15 -9.5
IDM
-60
Avalanche Current
IAS
-24
Avalanche Energy
L = 0.1mH
EAS
28
Power Dissipation
TC = 25 °C
PD
35
TC = 100 °C
14
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 3.
P9006ETF Datasheet
