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PA210BL
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
120mΩ @VGS = 10V
ID 3A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1,2
TA = 25 °C TA = 70 °C
ID IDM
3 1.9 25
Avalanche Current
IAS 25
Avalanche Energy
L = 0.1mH
EAS
33
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2 0.8
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 60 °C / W
Ver 1.
PA210BL Datasheet
