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PA210HK - MOSFET

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Part number PA210HK
Manufacturer UNIKC
File Size 750.67 KB
Description MOSFET
Datasheet download datasheet PA210HK Datasheet
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PA210HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 120mΩ @VGS = 10V ID 8.7A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C 8.7 ID 5.5 IDM 25 Continuous Drain Current TA = 25 °C TA = 70 °C 2.8 ID 2.2 Avalanche Current IAS 8.7 Avalanche Energy L = 1mH EAS 37.8 Power Dissipation TC = 25 °C TC = 100 °C 20 PD 8 Power Dissipation TA = 25 °C TA = 70 °C 2.1 PD 1.
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