900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






UNIKC

PB606BA Datasheet Preview

PB606BA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PB606BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 16mΩ @VGS = 10V
ID
7.8A
PDFN 2X2S
100%RG TEST
100%UIL TEST
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
7.8
6.2
21
Avalanche Current
IAS 12.8
Avalanche Energy
L = 0.1 mH
EAS
8.2
Power Dissipation
TA= 25 °C
TA= 70°C
PD
1.5
1
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe.
MAXIMUM
80
UNITS
°C / W
REV 1.0
1 2014/12/17




UNIKC

PB606BA Datasheet Preview

PB606BA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PB606BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1.3 1.75 2.3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS =24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 55°C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 6A
VGS =10V, ID = 7A
VDS =10V, ID = 7A
19 24
13 16
31 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
329
68 pF
48
2.6 Ω
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V
Q)gs
VDS = 15V , ID = 7A
8.1
4.5
nC
1.1
Gate-Drain Charge2
Qgd
2.4
Turn-On Delay Time2
td(on)
17
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 15V
ID @ 7A, VGEN = 10V, RG = 6Ω
17
nS
37
Fall Time2
tf
18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
1.5 A
Forward Voltage1
VSD IF = 7A, VGS = 0V
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 7A, dlF/dt = 100A / mS
9.6 nS
2.9 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2014/12/17


Part Number PB606BA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
PDF Download

PB606BA Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 PB606BA N-Channel Enhancement Mode MOSFET
UNIKC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy