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PE548BA Datasheet Preview

PE548BA Datasheet

N-Channel Enhancement Mode MOSFET

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PE548BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.5mΩ @VGS = 10V
ID
56A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C
56
Continuous Drain Current2
Tc = 100 °C
TA = 25 °C
ID
35
16
Pulsed Drain Current1
TA= 70 °C
IDM
12.6
150
Avalanche Current
IAS 36.8
Avalanche Energy
L =0.1mH
EAS
67.7
TC = 25 °C
25
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
10
2
TA = 70 °C
1.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
60
Junction-to-Case
RqJC
5
1Pulse width limited by maximum junction temperature.
2Package limitation current is 24A.
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2014-2-28




UNIKC

PE548BA Datasheet Preview

PE548BA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PE548BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
VGS = 4.5V, ID = 16A
VGS = 10V , ID = 16A
VDS = 5V, ID = 16A
30
1
1.6 3
V
±100 nA
1
mA
10
4.4 6.3
3.7 4.5
80 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
2280
350
297
0.9
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS = 15V , ID = 16A
56.6
29.9
7.1
Gate-Drain Charge2
Qgd
15.7
Turn-On Delay Time2
td(on)
24
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD= 15V,
ID @ 16A, VGEN = 10V, RG= 6Ω
16
63
Fall Time2
tf
24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 16A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 16A, dlF/dt = 100A / μS
26
14
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 24A.
25
1
nC
nS
A
V
nS
nC
REV 1.0
2 2014-2-28


Part Number PE548BA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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