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10N30 - 300V N-CHANNEL POWER MOSFET

General Description

The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology.

This technology specializes in allowing a minimum on-state resistance and superior switching performance.

Key Features

  • RDS(ON) ≤ 0.4 Ω @ VGS=10V, ID=10A.
  • High switching speed.
  • 100% avalanche tested.
  • SYMBOL 2.Drain 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-251 1 TO-252 1.Gate 3.Source.

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Full PDF Text Transcription for 10N30 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 10N30. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 10N30 Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced tec...

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UTC 10N30 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 10N30 is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply.  FEATURES * RDS(ON) ≤ 0.4 Ω @ VGS=10V, ID=10A * High switching speed * 100% avalanche tested  SYMBOL 2.Drain 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-251 1 TO

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