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12N65-ML - N-CHANNEL POWER MOSFET

General Description

combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) ≤ 0.85 Ω @ VGS=10V, ID=6.0A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness 1 TO-262 1 TO-263.
  • SYMBOL 2.Drain 1.Gate 3.Source.

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12N65 N-CHANNEL POWER MOSFET Unisonic Technologies

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 12N65-ML 12A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N65-ML is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. Power MOSFET 1 1 TO-220 TO-220F 1 1 TO-220F1 TO-220F2  FEATURES * RDS(ON) ≤ 0.85 Ω @ VGS=10V, ID=6.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness 1 TO-262 1 TO-263  SYMBOL 2.Drain 1.Gate 3.