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2N3773 Datasheet Preview

2N3773 Datasheet

COMPLEMENTARY SILICON TRANSISTORS

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2N3773 pdf
UTC2N3773/2N6099
POWER TRANSISTOR
COMPLEMENTARY SILICON
TRANSISTORS
The 2N3773/2N6099 are power-base power transistors
designed for high power audio, disk head positions and
other linear applications. These device can be used in
power switching circuits such as relay or solened drivers,
DC to DC converters or inverts.
FEATURES
*High safe operating area(100 tested)
150W and 100V
*Complement Characterized for linear operation
*High DC Current Gain and low saturation voltage
Hfe=15(8A 4V)
Vce(sat)=1.4V(Ic=8A,Ib=0.8A)
*For Low Distortion Complementary Designs
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )
PARAMETERS
SYMBOL
VALUE
Collector-base voltage
VCBO
160
Collector-emitter voltage
VCEO
140
Emitter-base voltage
VEBO
7
Collector-emitter voltage
Total Power dissipation
wVwwC.EDXataSheet4U.com
Pc
160
Tc=25°C
Dertate above 25°C
150
0.855
Collector current
Ic
continuous
16
Peak
30
Base current
IB
continuous
4
Peak
15
Thermal resistance Junction to Case
RθJC
1.17
Storage Temperature
TSTG
-65 ~ +200
TO-3
UNITS
V
V
V
V
W
W/°C
A
A
A
A
°C/W
°C
UTC
UNISONIC TECHNOLOGIES CO. LTD 1
QW-R205-001,A



UTC
UTC

2N3773 Datasheet Preview

2N3773 Datasheet

COMPLEMENTARY SILICON TRANSISTORS

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2N3773 pdf
UTC2N3773/2N6099
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO
Ic=0.2A,Ib=0
140
Collector-Emitter Sustaining Voltage BVCEX
Ic=0.1A,Vbe(OFF)=1.5V
Rbe=100
160
Collector-Emitter Sustaining Voltage BVCER
Ic=0.1A
Rbe=100
150
Collector Cut-off Current
ICBO
VCB=140V,IE=0
Emitter Cut-off Current
IEBO
VBE=7V,Ic=0
Collector Cut-off Current
ICEX
VCE=140V,VBE(off)=1.5V
VCE=140V,VBE(off)=1.5V
,Tc=150°C
OFF CHARACTERISTICS
DC current gain(note)
hFE1
hFE2
VCE=4V,Ic=8A
VCE=4V,Ic=16A
15
5
Collector-emitter saturation voltage VCE(sat)
Ic=8A,IB=800mA
Ic=16A,IB=3.2A
Base-emitter saturation voltage
VBE(on)
Ic=8A, VCE=4V
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
hFE
Ic=1A,VCE=4V,f=1kHz
40
Magnitade of commom-Emitter
small signal,short circuit forward
|hFE|
Ic=1A,f=50kHz
4
current transfer ratio
Second breakdown collector with Is/b t=1s(non-repetive),VCE=100V 1.5
base forward biased
TYP
2
10
MAX
2
5
60
1.4
4
2.2
UNIT
V
V
V
mA
mA
mA
mA
V
V
A
UTC
UNISONIC TECHNOLOGIES CO. LTD 2
QW-R205-001,A


Part Number 2N3773
Description COMPLEMENTARY SILICON TRANSISTORS
Maker UTC
Total Page 5 Pages
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