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2N60 - N-CHANNEL MOSFET

Description

The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness Power MOSFET.
  • SYMBOL www. unisonic. com. tw Copyright © 2021 Unisonic Technologies Co. , Ltd 1 of 7 QW-R502-053.AB 2N60 Power MOSFET.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 2N60 2.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness Power MOSFET  SYMBOL www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-053.
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