Datasheet Details
| Part number | 2N65 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 432.56 KB |
| Description | 650V N-CHANNEL POWER MOSFET |
| Datasheet |
 2N65 Datasheet
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General Description
The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Key Features
- S.
- RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0A.
- Ultra Low gate charge (typical 45nC).
- Low reverse transfer capacitance (CRSS = typical 9 pF).
- Fast switching capability.
- Avalanche energy specified.
- Improved dv/dt capability, high ruggedness.
- SYMBOL 2.Drain 1 TO-252D 1 TO-263 1 TO-262 1 1 TO-126 TO-126C 1 TO-126S 1.Gate 3.Source www. unisonic. com. tw Copyright © 2020 Unisonic Technologies Co. , Ltd 1 of 7 QW-R502-370.M 2N65 Power MOSFET.
