2N65 Datasheet | Specifications & PDF Download

SEMICONDUCTOR I2N65 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 650Volts DESCRIPTION The Nell 12N65 is a three-terminal sil

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STM32N6x5xx STM32N6x7xx Arm® Cortex®-M55-based MCU, with ST Neural-ART Accelerator, H264 encoder, Neo-Chrom 2.5D GPU, 4.2 Mbyte-contiguous SRAM Datas

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Advance Technical Information X2-Class Power MOSFET IXTN102N65X2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor NTB082N65S3F ·DESCRIPTION ·Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V ·Drain Source Volta

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N65 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-

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OSD2N65 http://www.osen.net.cn 650V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Avalanche en

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY2N65X2 IXTP2N65X2 VDSS = ID25 = RDS(on) 650V 2A 2.3 Symb

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CEP12N65/CEB12N65 CEF12N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP12N65 CEB12N65 CEF12N65 VDSS 650V 650

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche

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NTB082N65S3F Power MOSFET, N‐Channel, SUPERFET) III, FRFET), 650 V, 40 A, 82 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high v

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PFP12N65E / PFF12N65E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar

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Preliminary Technical Information X2-Class Power MOSFET IXTK102N65X2 IXTX102N65X2 VDSS = ID25 = RDS(on)  650V 102A 30m N-Channel Enhancement Mo

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Silicon N-Channel Power MOSFET CS2N65 A3HY ○R General Description： VDSS 650 V CS2N65 A3HY, the silicon N-channel Enhanced ID 2A VDMOSFETs, is o

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Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP02N65 SDF02N65 Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Max

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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PFP12N65 / PFF12N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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CEP02N65D/CEB02N65D CEF02N65D N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP02N65D CEB02N65D CEF02N65D VDSS 65

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CEP02N65D/CEB02N65D CEF02N65D N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP02N65D CEB02N65D CEF02N65D VDSS 65

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isc N-Channel MOSFET Transistor ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for

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