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2SB1412 Datasheet Preview

2SB1412 Datasheet

HIGH VOLTAGE SWITCHING TRANSISTOR

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2SB1412 pdf
UNISONIC TECHNOLOGIES CO., LTD
2SB1412
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
DESCRIPTION
The UTC 2SB1412 is an epitaxial planar type PNP silicon
transistor.
FEATURES
*Excellent DC current gain characteristics
*Low VCE(SAT)
VCE(SAT)= -0.35V (Typ)
(IC/IB = -4A/-0.1A)
1
TO-252
*Pb-free plating product number:2SB1412L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
Package
Pin Assignment
1 23
2SB1412-TN3-F-R
2SB1412L-TN3-F-R TO-252www.DataSheet4U.com B C E
Packing
Tape Reel
2SB1412L-TN3-F-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Lead Plating
(1) R: Tape Reel
(2) refer to Pin Assignment
(3) TN3: TO-252
(4) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 5
QW-R209-021,A



UTC
UTC

2SB1412 Datasheet Preview

2SB1412 Datasheet

HIGH VOLTAGE SWITCHING TRANSISTOR

No Preview Available !

2SB1412 pdf
2SB1412
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)
PARAMETER
SYMBOL
LIMITS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(PULSE) Single pulse, Pw=10ms
Collector Power Dissipation
Collector Power Dissipation (note2)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PD
PD
TJ
TSTG
-30
-20
-6
-5
-10
1
10(TC=25°C)
+150
-40 ~ +150
V
V
V
A
A
W
W
°C
°C
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.When mounted on a 40*40*0.7mm ceramic board.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector Base Breakdown Voltage BVCBO IC= -50 A
Collector Emitter Breakdown Voltage BVCEO IC= -1mA
Emitter Base Breakdown Voltage
BVEBO IE= -50 A
Collector Cut-Off Current
ICBO VCB= -20V
Emitter Cut-Off Current
IEBO VEB= -5V
DC Current Transfer Ratio
hFE VCE= -2V,Ic= -0.5A
Collector-Emitter Saturation Voltage VCE(SAT) IC/IB= -4A/-0.1A
Transition Frequency
fT VCE= -6V, IE= 50 mA, f=30MHz
Output Capacitance
Cob VCB= -20V, IE= 0 A, f=1MHz
MIN TYP MAX UNIT
-30 V
-20 V
-6 V
-0.5 A
-0.5 A
82 390
-1.0 V
120 MHz
60 pF
CLASSIFICATION OF hFE
RANK
RANGE
P
82-180
Q
120-270
R
180-390
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R209-021,A


Part Number 2SB1412
Description HIGH VOLTAGE SWITCHING TRANSISTOR
Maker UTC
Total Page 5 Pages
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2SB1412 pdf
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