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2SB1412 - HIGH VOLTAGE SWITCHING TRANSISTOR

Description

The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor.

Features

  • S.
  • Excellent DC current gain characteristics.
  • Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor.  FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R TO-252 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-021.
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