Datasheet Summary
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
4A, 1000V N-CHANNEL POWER MOSFET
- DESCRIPTION
The UTC 4N100-FCQ provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
- Features
- RDS(ON) ≤ 6.7 Ω @ VGS=10V, ID=1.0A
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
2.Drain
TO-220F
1 TO-251
Power MOSFET
1 TO-220F1
TO-220F2
1 TO-252
1.Gate
3.Source
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N100L-TF1-T
4N100G-TF1-T
4N100L-TF2-T
4N100G-TF2-T
4N100L-TF3-T
4N100G-TF3-T...