Download F2N60 Datasheet PDF
F2N60 datasheet preview
F2N60 page 2
Page 2
F2N60 page 3
Page 3

F2N60 Key Features

  • RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A
  • Fast body diode MOSFET technology
  • Ultra Low gate charge (typical 16nC)
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
  • SYMBOL
  • ORDERING INFORMATION
  • MARKING

Other F2N60 Datasheets

Manufacturer Part Number Description
ROUM
ROUM		 F2N60 2A 600V N-channel Enhancement Mode Power MOSFET
Pan Jit International Logo PanJit Semiconductor F2N60 PJF2N60
Red Diamond Optoelectronics
Red Diamond Optoelectronics		 F2N60 N-CHANNEL POWER MOSFET

View all F2N60 datasheets →

F2N60 Description

The UTC F2N60 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching applications such, is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies,...