Datasheet Details
| Part number | F2N60 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 223.80 KB |
| Description | 600V N-CHANNEL POWER MOSFET |
| Datasheet | F2N60-UTC.pdf |
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Overview: UNISONIC TECHNOLOGIES CO., LTD F2N60 2.0A, 600V N-CHANNEL POWER.
| Part number | F2N60 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 223.80 KB |
| Description | 600V N-CHANNEL POWER MOSFET |
| Datasheet | F2N60-UTC.pdf |
|
|
|
The UTC F2N60 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching applications such, is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
Compare F2N60 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ROUM | F2N60 | 2A 600V N-channel Enhancement Mode Power MOSFET | ROUM |
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F2N60 | PJF2N60 | Pan Jit International |
| Red Diamond Optoelectronics | F2N60 | N-CHANNEL POWER MOSFET | Red Diamond Optoelectronics |
| Part Number | Description |
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