F2N60 Datasheet 2a 600v N-channel Enhancement Mode Power MOSFET

Manufacturer: ROUM

Overview: 2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET.

Datasheet Details

Part number	F2N60
Manufacturer	ROUM
File Size	1.42 MB
Description	2A 600V N-channel Enhancement Mode Power MOSFET
Datasheet	F2N60-ROUM.pdf

General Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

VDSS = 600V RDS(on) （TYP)= 4.0Ω ID = 2A 2

Key Features

Fast Switching.
Low ON Resistance(Rdson≤4.5Ω).
Low Gate Charge(Typ:8nC).
Low Reverse Transfer Capacitances(Typ:3.8pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test TO-220C TO-220F TO-262 3.

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