Datasheet Summary
2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
VDSS = 600V RDS(on) （TYP)= 4.0Ω
ID = 2A
2 Features
- Fast Switching
- Low ON Resistance(Rdson≤4.5Ω)
- Low Gate Charge(Typ:8nC)
- Low Reverse Transfer Capacitances(Typ:3.8pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
TO-220C TO-220F
TO-262
3 Applications
- used in various power switching circuit for system miniaturization and higher efficiency.
- Power...
