F2N60 Overview
PJP2N60 / PJF2N60 600V N-Channel Enhancement Mode MOSFET.
F2N60 Key Features
- 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A
- Low ON Resistance
- Fast Switching
- Low Gate Charge
- Fully Characterized Avalanche Voltage and Current
- Specially Desigened for AC Adapter, Battery Charge and SMPS
- In pliance with EU RoHs 2002/95/EC Directives
- Case: TO-220AB / ITO-220AB Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- 55 to +150
