F2N60 Datasheet N-channel Power MOSFET

Manufacturer: Red Diamond Optoelectronics

Overview: F2N60 N-沟道功率 MOS 管/N-CHANNEL POWER MOSFET ◆应用:电子镇流器电子变压器开关电源 ◇Applications:Electronic Ballast Electronic Transformer Switch Mode Power Supply ◆特点:热阻低开关速度快输入阻抗高符合 RoHS 规范.

Datasheet Details

Part number	F2N60
Manufacturer	Red Diamond Optoelectronics
File Size	69.35 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	F2N60-RedDiamondOptoelectronics.pdf

Key Features

Low Thermal Resistance High Speed Switching High Input Resistance RoHS Compliant TO-220 单位:mm.
最大额定值(Tc=25℃) ◇Absolute Maximum Ratings(Tc=25℃) 参数 Parameter 漏-源电压 Drain-Source Voltage 栅-源电压 Gate-Source Voltage 漏极电流 Continuous Drain Current 耗散功率 Power Dissipation 最高结温 Junction Temperature 贮存温度 Storage Temperature 符号 Symbol VDS VGS ID TC=25℃ TC=100℃ PD Tj Tstg 额定值 Value 600 ±20 2.4 1.5 64 150 -55～150 单位 Unit V V A W ℃ ℃ 深0.1 123.
电特性(Tc=25℃) 1-Gate 栅极 2-Drain 漏极 3-Source 源.

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