Red Diamond Optoelectronics F2N60
N-CHANNEL POWER MOSFET
| Part No. | F2N60 |
|---|---|
| Datasheet | F2N60 Download |
| Manufacturer | Red Diamond Optoelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
APPLICATIONS
:Electronic Ballast Electronic Transformer Switch Mode Power Supply●特点:热阻低 开关速度快 输入阻抗高 符合 RoHS 规范 ◇
FEATURES
:Low Thermal Resistance High Speed Switching High Input Resistance RoHS Compliant TO-220 单位:mm●最大额定值(Tc=25℃) ◇
ABSOLUTE MAXIMUM RATINGS
(Tc=25℃) 参数 Parameter 漏-源电压 Drain-Source Voltage 栅-源电压 Gate-Source Voltage 漏极电流 Continuous Drain Current 耗散功率 Power Dissipation 最高结温 Junction Temperature 贮存温度 Storage Temperature 符号 Symbol VDS VGS ID TC=25℃ TC=100℃ PD Tj Tstg 额定值 Value 600 ±20 2.4 1.5 64 150 -55～150 单位 Unit V V A W ℃ ℃ 深0.1 123●电特性(Tc=25℃) 1-Gate 栅极 2-Drain 漏极 3-Source 源极 ◇Electronic Characteristics(Tc=25℃) 参数名称 Charcteristics 漏-源击穿电压 Drain-Source Breakdown Voltage 栅极开启电压 Gate Threshold Voltage 漏-源漏电流 Drain-Source Leakage Current 通态漏极电流 On State Drain Current 栅极漏电流 Gate-Body Leakage Current (VDS=0) 漏-源导通电阻 Static Drain-Source On Resistance 热阻结-壳 Thermal Resistance Junction-Case 符号 Symbol BVDSS VGS(TH) IDSS ID(ON) IGSS RDS(ON) RθJC 测试条件 Test Condition VGS=0,ID=250μA VG...