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F2N60 - N-CHANNEL POWER MOSFET

Features

  • Low Thermal Resistance High Speed Switching High Input Resistance RoHS Compliant TO-220 :mm.
  • (Tc=25℃) ◇Absolute Maximum Ratings(Tc=25℃) Parameter - Drain-Source Voltage - Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature Storage Temperature Symbol VDS VGS ID TC=25℃ TC=100℃ PD Tj Tstg Value 600 ±20 2.4 1.5 64 150 -55～150 Unit V V A W ℃ ℃ 0.1 123.
  • (Tc=25℃) 1-Gate 2-Drain 3-Source ◇Electronic Characteristics(Tc=25℃) Charcteri.

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Datasheet Details

Part number F2N60
Manufacturer Red Diamond Optoelectronics
File Size 69.35 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet F2N60 Datasheet

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Full PDF Text Transcription

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F2N60 N- MOS /N-CHANNEL POWER MOSFET ◆: ◇Applications:Electronic Ballast Electronic Transformer Switch Mode Power Supply ◆: RoHS ◇Features:Low Thermal Resistance High Speed Switching High Input Resistance RoHS Compliant TO-220 :mm ◆(Tc=25℃) ◇Absolute Maximum Ratings(Tc=25℃) Parameter - Drain-Source Voltage - Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature Storage Temperature Symbol VDS VGS ID TC=25℃ TC=100℃ PD Tj Tstg Value 600 ±20 2.4 1.5 64 150 -55～150 Unit V V A W ℃ ℃ 0.
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