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F2N60 - 600V N-CHANNEL POWER MOSFET

Description

The UTC F2N60 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching applications such, is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugg

Features

  • S.
  • RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A.
  • Fast body diode MOSFET technology.
  • Ultra Low gate charge (typical 16nC).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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UNISONIC TECHNOLOGIES CO., LTD F2N60 2.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC F2N60 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching applications such, is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.  FEATURES * RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.
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