F2N60 Overview
The UTC F2N60 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching applications such, is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies,...
F2N60 Key Features
- RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A
- Fast body diode MOSFET technology
- Ultra Low gate charge (typical 16nC)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
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