Unisonic Technologies F2N60
F2N60 is a N-Channel enhancement mode silicon gate power MOSFET with Fast Body Diode, is designed high voltage, high speed power switching applications such, is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.| Part No. | F2N60 |
|---|---|
| Datasheet | F2N60 Download |
| Manufacturer |  Unisonic Technologies |
| Description | 600V N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * Fast body diode MOSFET technology * Ultra Low gate charge (typical 16nC) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free F2N60L-TN3-T F2N60G-TN3-T F2N60L-TN3-R F2N60G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel F2N60G-TN3-T (1)Packing Type (2)Package Type (3)Green Package (1) R: Tape Reel (2) TN3: TO-252 (3) G: Halogen Free and Lead Free, L: Lead Free Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-952.B F2N60
● MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 7 QW-R502-952.B F2N60 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Drain Current Con...
