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MMBT4401 Datasheet Preview

MMBT4401 Datasheet

NPN GENERAL PURPOSE AMPLIFIER

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MMBT4401 pdf
UNISONIC TECHNOLOGIES CO., LTD
MMBT4401
NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
The UTC MMBT4401 is designed for use as a medium power
amplifier and switch requiring collector currents up to 500mA.
3
1
2
SOT-23
*Pb-free plating product number: MMBT4401L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MMBT4401-AE3-R MMBT4401L-AE3-R
www.DataSheet4U.com
Package
SOT-23
Pin Assignment
123
EBC
Packing
Tape Reel
MMBT4401L-AE3-R
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) R: Tape Reel
(2) AE3: SOT-23
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
2X
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 6
QW-R206-035,B



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MMBT4401 Datasheet Preview

MMBT4401 Datasheet

NPN GENERAL PURPOSE AMPLIFIER

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MMBT4401 pdf
MMBT4401
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING* (Ta=25 , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Device Dissipation
Derate above 25
VCBO
VCEO
VEBO
IC
PD
60 V
40 V
6V
600 mA
350 mW
2.8 mW/
Junction Temperature
TJ +150
Storage Temperature
TSTG
-40 ~ +150
Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA (Ta=25 , unless otherwise specified)
CHARACTERISTIC
SYMBOL
Thermal Resistance, Junction to Ambient
θJA
RATING
357
UNIT
/W
ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (note)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Base Cut-off Current
ON CHARACTERISTICS (note)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
BVCBO
BVCEO
BVEBO
ICEX
IBL
IC=0.1mA, IE=0
IC=1mA, IB=0
IE=0.1mA, IC=0
VCE=35V, VEB=0.4V
VCE=35V, VEB=0.4V
hFE1 VCE=1V, IC=0.1mA
hFE2 VCE=1V, IC=1mA
hFE3 VCE=1V, IC=10mA
hFE4 VCE=1V, IC=150mA
hFE5 VCE=2V, IC=500mA
VCE(SAT1) IC=150mA, IB=15mA
VCE(SAT2) IC=500mA, IB=50mA
VBE(SAT1) IC=150mA, IB=15mA
VBE(SAT2) IC=500mA, IB=50mA
60
40
6
20
40
80
100
40
0.75
SMALL SIGNAL CHARACTERISTICS1
Current Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
fT VCE=10V, IC=20mA, f=100MHz 250
Ccb VCB=5V, IE=0, f=140kHz
Ceb VBE=0.5V, IC=0, f=140kHz
hie VCE=10V, IC=1mA, f=1kHz
1
hre VCE=10V, IC=1mA, f=1kHz
0.1
hfe VCE=10V, IC=1mA, f=1kHz
40
hoe VCE=10V, IC=1mA, f=1kHz
1
SWITCHING CHARACTERISTICS
Delay Time
tD
Rise Time
tR
Storage Time
tS
Fall Time
tF
Note: Pulse test: PulseWidth300µs, Duty Cycle2%
VCC=30V, VEB=2V
IC=150mA IB1=15mA
VCC=30V, VEB=2V
IC=150mA IB1=15mA
VCC=30V, IC=150mA
IB1= IB2=15mA
TYP
MAX UNIT
V
V
V
µA
µA
300
0.4
0.75
0.95
1.2
V
V
V
V
MHz
6.5 pF
30 pF
15 k
8 ×10-4
500
30 µmhos
15 ns
20 ns
225 ns
30 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R206-035,B


Part Number MMBT4401
Description NPN GENERAL PURPOSE AMPLIFIER
Maker UTC
Total Page 6 Pages
PDF Download
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