UF830K-MT Key Features
- RDS(ON) < 1.5Ω @ VGS = 10V, ID = 2.5 A
- Single Pulse Avalanche Energy Rated
- Rugged- SOA is Power Dissipation Limited
- Fast Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- SYMBOL
- ORDERING INFORMATION
- MARKING
- Part: UF830K-MT
- Manufacturer: Unisonic Technologies (official site)
- Size: 294.25 KB
Other UF830K-MT Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
UF830K | N-CHANNEL POWER MOSFET |
Microsemi |
UF830 | ULTRA FAST RECOVERY RECTIFIER |
|
Unisonic Technologies |
UF830-CB | N-CHANNEL POWER MOSFET |
|
Unisonic Technologies |
UF830-E | N-CHANNEL POWER MOSFET |
|
Unisonic Technologies |
UF830-F | N-CHANNEL POWER MOSFET |
UF830K-MT Description
The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.