* RDS(ON) ≤ 1.2 Ω @ VGS=4.5V, ID=300mA RDS(ON) ≤ 1.6 Ω @ VGS=2.5V, ID=200mA RDS(ON) ≤ 3.0 Ω @ VGS=1.8V, ID=100mA RDS(ON) ≤ 5.0 Ω @ VGS=1.5V, ID=50mA * Fast Switching Spee.

provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.
*.

The UTC UT03NN03Z is a dual N-Channel enhancement mode power MOSFET, minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications, provides designer with fas.

UT0324-41

UT03P06

UT01VS33D

UT01VS33L

UT01VS50D

UT01VS50L

UT02N06VZ

UT02P06

UT04VS33P

UT04VS50P

UT06P03

UT-1

UT-10