Datasheet Summary
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
-3.3A, -20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
- DESCRIPTION
The UTC UT2315 is P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
- Features
- Extremely low on-resistance due to high density cell
- Perfect thermal performance and electrical capability with advanced technology of trench process
- SYMBOL
Power MOSFET
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