UT2NN03V
UT2NN03V is N-CHANNEL POWER MOSFET manufactured by Unisonic Technologies.
DESCRIPTION
The UTC UT2NN03V is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization.
Used in mercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
- FEATURES
- RDS(ON) ≤ 96 mΩ @ VGS=10V, ID=1.9A RDS(ON) ≤ 105 mΩ @ VGS=4.5V, ID=1.6A RDS(ON) ≤ 128 mΩ @ VGS=2.5V, ID=1.2A RDS(ON) ≤ 180 mΩ @ VGS=1.8V, ID=0.7A
- Fast switching capability
- Avalanche energy tested
- Improved dv/dt capability, high ruggedness
- SYMBOL
Power MOSFET
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT2NN03VL-AL5-R
UT2NN03VG-AL5-R
Note: Pin Assignment: G: Gate S: Source D: Drain
Package SOT-353
Pin Assignment 1 2 345
Packing
G1 S1/S2 G2 D2 D1 Tape Reel
.unisonic..tw Copyright © 2023 Unisonic Technologies Co., Ltd
1 of 5
QW-R209-450.a
- MARKING
Preliminary
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
.unisonic..tw
2 of 6
QW-R209-450.a
Preliminary
Power MOSFET
- ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source...
