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UT2N20 - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC UT2N20 is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.

Features

  • S.
  • RDS(ON) ≤ 625 mΩ @ VGS=10V, ID=1.0A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Drain Gate Source.

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Datasheet preview – UT2N20

Datasheet Details

Part number UT2N20
Manufacturer UTC
File Size 272.15 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet UT2N20 Datasheet
Additional preview pages of the UT2N20 datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UT2N20 2.0A, 200V N-CHANNEL POWER MOSFET POWER MOSFET  DESCRIPTION The UTC UT2N20 is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES * RDS(ON) ≤ 625 mΩ @ VGS=10V, ID=1.
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