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UT2NN03V - N-CHANNEL POWER MOSFET

General Description

The UTC UT2NN03V is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization.

Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

FEATUR

Key Features

  • S.
  • RDS(ON) ≤ 96 mΩ @ VGS=10V, ID=1.9A RDS(ON) ≤ 105 mΩ @ VGS=4.5V, ID=1.6A RDS(ON) ≤ 128 mΩ @ VGS=2.5V, ID=1.2A RDS(ON) ≤ 180 mΩ @ VGS=1.8V, ID=0.7A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT2NN03V Preliminary 2A, 30V N-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTC UT2NN03V is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.  FEATURES * RDS(ON) ≤ 96 mΩ @ VGS=10V, ID=1.9A RDS(ON) ≤ 105 mΩ @ VGS=4.5V, ID=1.6A RDS(ON) ≤ 128 mΩ @ VGS=2.5V, ID=1.2A RDS(ON) ≤ 180 mΩ @ VGS=1.8V, ID=0.