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UT3N01Z - N-CHANNEL MOSFET

General Description

The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device’s general purpose is for switching device applications.

Key Features

  • RDS(ON) ≤ 2.0Ω @ VGS=4V, ID=80mA RDS(ON) ≤ 3.0Ω @ VGS=2.5V, ID=40mA RDS(ON) ≤ 12.8Ω @ VGS=1.5V, ID=10mA.
  • Ultra low gate charge ( typical 5 nC ).
  • Low reverse transfer capacitance ( CRSS = typical 7.5 pF ).
  • Fast switching capability.
  • Enhanced ESD capability.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription for UT3N01Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UT3N01Z. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UT3N01Z N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS  DESCRIPTION The UT3N01Z uses UTC advanced technology to pr...

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LICATIONS  DESCRIPTION The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device’s general purpose is for switching device applications.  FEATURES * RDS(ON) ≤ 2.0Ω @ VGS=4V, ID=80mA RDS(ON) ≤ 3.0Ω @ VGS=2.5V, ID=40mA RDS(ON) ≤ 12.8Ω @ VGS=1.5V, ID=10mA * Ultra low gate charge ( typical 5 nC ) * Low reverse transfer capacitance ( CRSS = typical 7.

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