Datasheet4U Logo Datasheet4U.com

UT3NP06 - N-CHANNEL / P-CHANNEL Power MOSFET

General Description

The UTC UT3NP06 incorporates a N-channel MOSFET and a P-channel MOSFET，it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed, low gate charge and cost effectiveness.

The UTC UT3NP06 is universally applied in low voltage applications.

FEATURE

Key Features

  • r>.
  • N-.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UT3N06 N-CHANNEL MOSFET Unisonic Technologies
UT3N06G-AE3-R N-Channel MOSFET VBsemi
UT3005 STANDARD RECOVERY RECTIFIERS Digitron Semiconductors
UT3005 Standard Recovery Rectifiers Microsemi
UT3006 N-Channel Power MOSFET Unisonic Technologies

Other Datasheets by Unisonic Technologies

Part Number Description
UT3N01Z N-CHANNEL MOSFET
UT3N06-Q 60V N-CHANNEL POWER MOSFET
UT3N10 N-CHANNEL MOSFET
UT3NN10 DUAL N-CHANNEL MOSFET
UT3008-H P-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD UT3NP06 DUAL ENHANCEMENT MODE (N-CHANNEL / P-CHANNEL)  DESCRIPTION The UTC UT3NP06 incorporates a N-channel MOSFET and a P-channel MOSFET，it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed, low gate charge and cost effectiveness. The UTC UT3NP06 is universally applied in low voltage applications.  FEATURES *N-CHANNEL: 3A, 60V RDS(on) ≤ 56 mΩ @ VGS=10V, ID=1.5A RDS(on) ≤ 66 mΩ @ VGS=4.5V, ID=1.5A *P-CHANNEL: -3A, -60V RDS(on) ≤ 95 mΩ @ VGS=-10V, ID=-1.5A RDS(on) ≤ 120 mΩ @ VGS=-4.5V, ID=-1.