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UT3N10 - N-CHANNEL MOSFET

General Description

The UTC UT3N10 is an N-channel power MOSFET providing very low on-resistance.

It has high efficiency and perfect cost-effectiveness.

It can be generally applied in the commercial and industrial fields.

Key Features

  • S.
  • RDS(ON) ≤ 165 mΩ @ VGS =10V, ID =3.0A RDS(ON) ≤ 180 mΩ @ VGS =4.5V, ID =2.0A.
  • Simple drive requirement.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT3N10 N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT3N10 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields.  FEATURES * RDS(ON) ≤ 165 mΩ @ VGS =10V, ID =3.0A RDS(ON) ≤ 180 mΩ @ VGS =4.5V, ID =2.