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UTG25N120-G2 Datasheet 1200v Trench Gate Field-stop IGBT

Manufacturer: Unisonic Technologies

Overview: UNISONIC TECHNOLOGIES CO., LTD UTG25N120-G2 Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT.

General Description

The UTC UTG25N120-G2 is an Trench Field-Stop Insulated Gate Bipolar Transistor.

it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.

The UTC UTG25N120-G2 is suitable for the resonant or soft switching applications.

Key Features

  • High switching speed.
  • High avalanche ruggedness.
  • Low saturation voltage: VCE(sat), typ =1.8V @ IC=25A (TC =25°C).
  • Low switching loss: EOFF, typ=2.36mJ @ IC=25A (TC =25°C).
  • SYMBOL 1 TO-247 1 TO-263.

UTG25N120-G2 Distributor