UTG25N120-G2 igbt equivalent, 1200v trench gate field-stop igbt.
* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =1.8V @ IC=25A (TC =25°C) * Low switching loss: EOFF, typ=2.36mJ @ IC=25A (TC =.
* FEATURES
* High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(sat), typ =1.8V @ IC=25.
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