UTG25N120-G2
UTG25N120-G2 is 1200V TRENCH GATE FIELD-STOP IGBT manufactured by Unisonic Technologies.
UNISONIC TECHNOLOGIES CO., LTD
Insulated Gate Bipolar Transistor
1200V TRENCH GATE FIELD-STOP IGBT
- DESCRIPTION
The UTC UTG25N120-G2 is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.
The UTC UTG25N120-G2 is suitable for the resonant or soft switching applications.
- Features
- High switching speed
- High avalanche ruggedness
- Low saturation voltage: VCE(sat), typ =1.8V @ IC=25A (TC =25°C)
- Low switching loss: EOFF, typ=2.36mJ @ IC=25A (TC =25°C)
- SYMBOL
1 TO-247
TO-263
- ORDERING INFORMATION
Ordering Number
Lead...
