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UTG25N120-G2 - 1200V TRENCH GATE FIELD-STOP IGBT

Product Overview

UTC

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UTG25N120-G2 1200V TRENCH GATE FIELD-STOP IGBT by UTC - Datasheet Preview — Datasheet preview – UTG25N120-G2

Datasheet Details

Part number	UTG25N120-G2
Manufacturer	UTC
File Size	746.71 KB
Description	1200V TRENCH GATE FIELD-STOP IGBT
Datasheet	UTG25N120-G2 Datasheet
Additional preview pages of the UTG25N120-G2 datasheet.

Product details

Description

The UTC UTG25N120-G2 is an Trench Field-Stop Insulated Gate Bipolar Transistor.

Features

High switching speed.
High avalanche ruggedness.
Low saturation voltage: VCE(sat), typ =1.8V @ IC=25A (TC =25°C).
Low switching loss: EOFF, typ=2.36mJ @ IC=25A (TC =25°C).
SYMBOL 1 TO-247 1 TO-263.

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Published: Feb 25, 2024 |