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UTG25N65-S UTC 650V TRENCH GATE FIELD-STOP IGBT

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Description The UTC UTG25N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG25N65-S is suitable for the resonant or soft switching applications.  FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.65V ...
Features * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=25A, VGE=15V (TC =25°C)
 SYMBOL
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG25N65L-TA3-T UTG25N65G-TA3-T TO-220 UTG25N65L-TF1-T UTG25N65G-TF1-T TO-220F1 UTG25N65L-T47-T UTG25N65G-T47-T TO-247 UTG25N65L-T...

Datasheet PDF File UTG25N65-S Datasheet - 211.84KB
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