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UTG50N120-S 1200V TRENCH GATE FIELD-STOP IGBT

UTG50N120-S Description

UNISONIC TECHNOLOGIES CO., LTD UTG50N120-S Preliminary Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT * .
The UTC UTG50N120-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.

UTG50N120-S Features

* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(SAT). Typ. =1.45V @ IC=50A, VGE=15V (TC =25°C)
* SYMBOL
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG50N120L-T47-T UTG50N120G-T47-T TO-247 Note: Pin Assignment: G:

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Datasheet Details

Part number
UTG50N120-S
Manufacturer
UTC
File Size
229.26 KB
Datasheet
UTG50N120-S-UTC.pdf
Description
1200V TRENCH GATE FIELD-STOP IGBT

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📌 All Tags

1200V TRENCH GATE FIELD-STOP IGBT UTC
UTC UTG50N120-S-like datasheet