Datasheet4U Logo Datasheet4U.com

UTG6N60-S 600V TRENCH GATE FIELD-STOP IGBT

UTG6N60-S Description

UNISONIC TECHNOLOGIES CO., LTD UTG6N60-S Preliminary Insulated Gate Bipolar Transistor 600V TRENCH GATE FIELD-STOP IGBT * .
The UTC UTG6N60-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.

UTG6N60-S Features

* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(SAT). Typ. =1.5V @ IC=6.0A, VGE=15V (TC =25°C)
* SYMBOL
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG6N60L-TN3-R UTG6N60G-TN3-R TO-252 Note: Pin Assignment: G: Gate

📥 Download Datasheet

Preview of UTG6N60-S PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
UTG6N60-S
Manufacturer
UTC
File Size
166.01 KB
Datasheet
UTG6N60-S-UTC.pdf
Description
600V TRENCH GATE FIELD-STOP IGBT

📁 Related Datasheet

  • UTG24P05 - 100/1000 BASE-T SINGLE PORT MAGNETICS MODULE (UTG)
  • UTG48T01 - 100/1000 BASE-T DUAL PORT MAGNETICS MODULE (UTG)

📌 All Tags

600V TRENCH GATE FIELD-STOP IGBT UTC
UTC UTG6N60-S-like datasheet