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UTG6N60-S UTC 600V TRENCH GATE FIELD-STOP IGBT

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Description The UTC UTG6N60-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG6N60-S is suitable for the resonant or soft switching applications.  FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.5V @ I...
Features * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.5V @ IC=6.0A, VGE=15V (TC =25°C)
 SYMBOL
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG6N60L-TN3-R UTG6N60G-TN3-R TO-252 Note: Pin Assignment: G: Gate C: Collector E: Emitter Pin Assignment 1 2 3 G C E Packing Ta...

Datasheet PDF File UTG6N60-S Datasheet - 166.01KB
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