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UTG60N60 - 600V TRENCH GATE FIELD-STOP IGBT

Datasheet Summary

Description

The UTC UTG60N60 is an Trench Field-Stop Insulated Gate Bipolar Transistor.

it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.

The UTC UTG60N60 is suitable for the resonant or soft switching applications.

FEATUR

Features

  • High switching speed.
  • High avalanche ruggedness.
  • Low saturation voltage: VCE(SAT). Typ. =1.5V @ IC=60A, VGE=15V (TC =25°C).
  • SYMBOL.

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Datasheet preview – UTG60N60

Datasheet Details

Part number UTG60N60
Manufacturer UTC
File Size 193.75 KB
Description 600V TRENCH GATE FIELD-STOP IGBT
Datasheet download datasheet UTG60N60 Datasheet
Additional preview pages of the UTG60N60 datasheet.

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UNISONIC TECHNOLOGIES CO., LTD UTG60N60 Preliminary Insulated Gate Bipolar Transistor 600V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG60N60 is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG60N60 is suitable for the resonant or soft switching applications.  FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.
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