Datasheet Summary
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Insulated Gate Bipolar Transistor
600V TRENCH GATE FIELD-STOP IGBT
- DESCRIPTION
The UTC UTG6N60-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.
The UTC UTG6N60-S is suitable for the resonant or soft switching applications.
- Features
- High switching speed
- High avalanche ruggedness
- Low saturation voltage: VCE(SAT).Typ.=1.5V @ IC=6.0A, VGE=15V
(TC =25°C)
- SYMBOL
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UTG6N60L-TN3-R
UTG6N60G-TN3-R
TO-252
Note:...