• Part: UTG80N65-S
  • Description: 650V TRENCH GATE FIELD-STOP IGBT
  • Manufacturer: Unisonic Technologies
  • Size: 716.13 KB
Download UTG80N65-S Datasheet PDF
UTG80N65-S page 2
Page 2
UTG80N65-S page 3
Page 3

Datasheet Summary

UNISONIC TECHNOLOGIES CO., LTD Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT - DESCRIPTION The UTC UTG80N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG80N65-S is suitable for the resonant or soft switching applications. - Features - High switching speed - High avalanche ruggedness - Low saturation voltage: VCE(SAT).Typ.= 1.65V @ IC=80A, VGE=15V (TC =25°C) - SYMBOL - ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTG80N65L-T47-T UTG80N65G-T47-T Note: Pin Assignment: G: Gate...