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UTG80N65-S UTC 650V TRENCH GATE FIELD-STOP IGBT

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Description The UTC UTG80N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG80N65-S is suitable for the resonant or soft switching applications.  FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.= 1.65V...
Features * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.= 1.65V @ IC=80A, VGE=15V (TC =25°C)
 SYMBOL
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTG80N65L-T47-T UTG80N65G-T47-T Note: Pin Assignment: G: Gate C: Collector E: Emitter Package TO-247 Pin Assignment 1 2 3 G C E Packing ...

Datasheet PDF File UTG80N65-S Datasheet - 716.13KB
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