UTG80N65ND-S
UTG80N65ND-S is 650V TRENCH GATE FIELD-STOP IGBT manufactured by Unisonic Technologies.
DESCRIPTION
The UTC UTG80N65ND-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.
The UTC UTG80N65ND-S is suitable for the resonant or soft switching applications.
- FEATURES
- High switching speed
- High avalanche ruggedness
- Low saturation voltage: VCE(SAT).Typ.= 1.6V @ IC=80A, VGE=15V
(TC =25°C)
- SYMBOL
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UTG80N65NDL-T47-T
UTG80N65NDG-T47-T
TO-247
Note: Pin Assignment: G: Gate C: Collector E: Emitter
Pin Assignment
Packing Tube
- MARKING
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QW-R234-043.b
Preliminary
Insulated Gate Bipolar Transistor
- ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCES
Gate-Emitter Voltage Transient Gate-emitter voltage (tp < 5 ms)
VGES
±20...
