Datasheet Details
| Part number | TTA145N08A |
|---|---|
| Manufacturer | Unigroup |
| File Size | 910.63 KB |
| Description | 85V N-Channel Trench MOSFET |
| Datasheet | TTA145N08A-Unigroup.pdf |
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Overview: TTA145N08A,TTB145N08A,TTP145N08A Wuxi Unigroup Microelectronics CO.,LTD.
| Part number | TTA145N08A |
|---|---|
| Manufacturer | Unigroup |
| File Size | 910.63 KB |
| Description | 85V N-Channel Trench MOSFET |
| Datasheet | TTA145N08A-Unigroup.pdf |
|
|
|
Product Summary l Trench Power technology l Low RDS(ON) l Low Gate Charge l Optimized for fast-switching applications VDS ID (at VGS =10V) RDS(ON) (at VGS =10V) 85V 145A < 5.9mΩ Applications l Synchronous Rectification in DC/DC and AC/DC Converters l Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% DVDS Tested TO-220F TO-263 TO-220 Part Number Package Type Form TTA145N08A TTB145N08A TTP145N08A TO-220F TO-263 TO-220 Tape&Reel Tape&Reel Tube Absolute Maximum Ratings (TA =25ºC unless otherwise noted) Parameter Symbol Maximum Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current B TC =25ºC TC =100ºC ID Pulsed Drain Current A IDM 85 ±20 105 102 435 Avalanche Current A IAS 56 Single Pulse Avalanche Energy L =0.3mH A EAS 470 Power Dissipation C TC =25ºC TC =100ºC Junction and Storage Temperature Range PD TJ, TSTG 272 136 -55 to 175 Thermal Characteristics Parameter Symbol Maximum Maximum Junction-to-Case Maximum Junction-to-Ambient Steady-State Steady-State RƟJC RƟJA 0.55 100 V1.0 1 Marking 145N08A 145N08A 145N08A Units V V A A A mJ W W ºC Units ºC/W www.tsinghuaicwx.com TTA145N08A,TTB145N08A,TTP145N08A Wuxi Unigroup Microelectronics CO.,LTD.
Electrical Characteristics(TJ =25ºC unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID =250µA,VGS =0V 85 IDSS Zero Gate Voltage Drain Current TJ =25ºC -- VDS =85V, VGS =0V TJ =125ºC -- IGSS Gate-Body Leakage Current VDS =0V, VGS =±20V -- VGS(th) Gate Threshold Voltage VDS =VGS, ID =250µA 2 RDS(ON) Static Drain-Source On-Resistance VGS =10V, ID =30A -- gFS Forward Transconductance VDS =5V, ID =20A -- VSD Diode Forward Voltage IS =30A, VGS =0V -- IS Maximum Body-Diode Continuous Current B -- DYNAMIC PARAMETERS
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